IRF6218SPBF

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Infineon Technologies

MOSFET P-CH 150V 27A D2PAK

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Unknown

Infineon Technologies

MOSFET P-CH 150V 27A D2PAK

Technical Specifications

Parameters and characteristics for this part

Specification	IRF6218SPBF

Current - Continuous Drain (Id) @ 25°C	27 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	110 nC
Input Capacitance (Ciss) (Max) @ Vds	2210 pF
Mounting Type	Surface Mount
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	250 W
Rds On (Max) @ Id, Vgs	150 mOhm
Supplier Device Package	D2PAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	5 V

Part	Mounting Type	Power Dissipation (Max) [Max]	Supplier Device Package	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Package / Case	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Rds On (Max) @ Id, Vgs	Current - Continuous Drain (Id) @ 25°C	Vgs (Max)	Vgs(th) (Max) @ Id	FET Type
Infineon Technologies IRF6218SPBF	Surface Mount	250 W	D2PAK	10 V	150 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	110 nC	2210 pF	MOSFET (Metal Oxide)	150 mOhm	27 A	20 V	5 V	P-Channel

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$