RGS50NL65DHRBTL
ObsoleteRohm Semiconductor
8ΜS SHORT-CIRCUIT TOLERANCE, 650V 25A, FRD BUILT-IN, AUTOMOTIVE FIELD STOP TRENCH IGBT
RGS50NL65DHRBTL
ObsoleteRohm Semiconductor
8ΜS SHORT-CIRCUIT TOLERANCE, 650V 25A, FRD BUILT-IN, AUTOMOTIVE FIELD STOP TRENCH IGBT
Description
General part information
RGS50NL65DHRB Series
RGS50NL65DHRB is a 8μs SCSOA guaranteed IGBT, suitable for general inverter for automotive and industrial use. This product complies AEC-Q101 qualification.
Technical Specifications
Parameters and characteristics for this part
| Specification | RGS50NL65DHRBTL |
|---|---|
| Current - Collector (Ic) (Max) | 50 A |
| Current - Collector Pulsed (Icm) | 75 A |
| Gate Charge | 31 nC |
| Grade | Automotive |
| IGBT Type | Trench Field Stop |
| Input Type | Standard |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -40 °C |
| Package / Case | D2PAK (2 Leads + Tab), TO-263-3, TO-263AB |
| Package Name | TO-263L |
| Power - Max | 206 W |
| Qualification | AEC-Q101 |
| Reverse Recovery Time (trr) | 95 ns |
| Switching Energy (Off) | 650 µJ |
| Switching Energy (On) | 810 µJ |
| Td (off) @ 25°C | 91 ns |
| Td (on) @ 25°C | 28 ns |
| Test Condition Current | 25 A |
| Test Condition Resistance | 10 Ohm |
| Test Condition Voltage | 400 V |
| Test Condition Voltage (Secondary) | 15 V |
| Vce(on) (Max) | 2.1 V |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
Semikron Danfoss: Partnering for the Safe Supply of Industrial Power Modules
Method for Calculating Junction Temperature from Transient Thermal Resistance Data
Calculation of Power Dissipation in Switching Circuit
The Problem with Traditional Vaccine Storage Freezers and How ROHM Cutting-edge Power Solutions Can Take them to the Next Level
About Export Administration Regulations (EAR)
About Flammability of Materials
PCB Layout Thermal Design Guide
Overview of ROHM's Simulation Models(for ICs and Discrete Semiconductors)
Impedance Characteristics of Bypass Capacitor
What is a Thermal Model? (IGBT)
Basics of Thermal Resistance and Heat Dissipation
Method for Monitoring Switching Waveform
Importance of Probe Calibration When Measuring Power: Deskew
How to Use the Thermal Resistance and Thermal Characteristics Parameters
Notes for Temperature Measurement Using Thermocouples
Precautions When Measuring the Rear of the Package with a Thermocouple
4 Steps for Successful Thermal Designing of Power Devices
What Is Thermal Design
Generation Mechanism of Voltage Surge on Commutation Side (Basic)
Notes for Calculating Power Consumption:Static Operation
Power Eco Family: Overview of ROHM's Power Semiconductor Lineup
Two-Resistor Model for Thermal Simulation
Judgment Criteria of Thermal Evaluation
θ<sub>JC</sub> and Ψ<sub>JT</sub>
How to Use LTspice® Models: Tips for Improving Convergence
Part Explanation
Measurement Method and Usage of Thermal Resistance RthJC
Notes for Temperature Measurement Using Forward Voltage of PN Junction
Precautions for Thermal Resistance of Insulation Sheet
How to Use LTspice® Models
θ<sub>JA</sub> and Ψ<sub>JT</sub>
Moisture Sensitivity Level
Compliance of the ELV directive
Types and Features of Transistors
Package Dimensions
Estimation of switching losses in IGBTs operating with resistive load
Anti-Whisker formation