AOT14N50

Alpha & Omega Semiconductor Inc.

MOSFET N-CH 500V 14A TO220

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 500V 14A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	AOT14N50

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	51 nC
Input Capacitance (Ciss) (Max) @ Vds	2297 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-220-3
Power Dissipation (Max)	278 W
Rds On (Max) @ Id, Vgs	380 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Supplier Device Package	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Power Dissipation (Max)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Package / Case	Technology	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	FET Type	Drive Voltage (Max Rds On, Min Rds On)
Alpha & Omega Semiconductor Inc. AOT14N50	Through Hole	-55 °C	150 °C	TO-220	380 mOhm	500 V	2297 pF	278 W	51 nC	4.5 V	TO-220-3	MOSFET (Metal Oxide)	30 V	14 A	N-Channel	10 V
Alpha & Omega Semiconductor Inc. AOT14N50FD	Through Hole	-55 °C	150 °C	TO-220	470 mOhm	500 V	2010 pF	278 W		4 V	TO-220-3	MOSFET (Metal Oxide)	30 V	14 A	N-Channel	10 V

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