Specification	SIHP22N60EF-GE3

Current - Continuous Drain (Id) (Tc)	19 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	96 nC
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3 Full Pack
Package Name	TO-220 Full Pack
Power Dissipation (Max)	179 W
Rds On (Max)	182 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

SIHP22 Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	Technology	Rds On (Max)	Power Dissipation (Max)	Vgs(th) (Max)	Drain to Source Voltage (Vdss)	Mounting Type	Current - Continuous Drain (Id) (Tc)	Package Name	Vgs (Max)	Gate Charge (Max)	Input Capacitance (Ciss) (Max)	Package / Case	FET Type	Drive Voltage (Max Rds On, Min Rds On)
Vishay Dale SIHP22N60AE-GE3	-55 °C	150 °C	MOSFET (Metal Oxide)	180 mOhm	179 W	4 V	600 V	Through Hole	20 A	TO-220AB	30 V	96 nC	1451 pF	TO-220-3	N-Channel	10 V
Vishay Dale SIHP22N60E-E3	-55 °C	150 °C	MOSFET (Metal Oxide)	180 mOhm	227 W	4 V	600 V	Through Hole	21 A	TO-220AB	30 V	86 nC	1920 pF	TO-220-3	N-Channel	10 V
Vishay Dale SIHP22N60E-GE3	-55 °C	150 °C	MOSFET (Metal Oxide)	180 mOhm	227 W	4 V	600 V	Through Hole	21 A		30 V	86 nC	1920 pF	TO-220-3	N-Channel	10 V
Vishay Dale SIHP22N60S-E3			MOSFET (Metal Oxide)	190 mOhm		4 V	600 V	Through Hole	22 A	TO-220AB		110 nC	2810 pF	TO-220-3	N-Channel
Vishay Dale SIHP22N60AEL-GE3	-55 °C	150 °C	MOSFET (Metal Oxide)	180 mOhm	208 W	4 V	600 V	Through Hole	21 A	TO-220AB	30 V	82 nC	1757 pF	TO-220-3	N-Channel	10 V
Vishay Dale SIHP22N60EF-GE3	-55 °C	150 °C	MOSFET (Metal Oxide)	182 mOhm	179 W	4 V	600 V	Through Hole	19 A	TO-220 Full Pack	30 V	96 nC		TO-220-3 Full Pack	N-Channel	10 V

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