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TK62N60W,S1VF

TK62N60W,S1VF

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Toshiba Semiconductor and Storage

HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.04 Ω@10V, TO-247, DTMOSⅣ

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TK62N60W,S1VF

TK62N60W,S1VF

Active
Toshiba Semiconductor and Storage

HIGH & LOW OUTPUT SOLUTIONS | TOSHIBA 400V - 900V MOSFETS, N-CH MOSFET, 600 V, 0.04 Ω@10V, TO-247, DTMOSⅣ

Find alt

Description

General part information

TK62N60W Series

High & Low Output Solutions | Toshiba 400V - 900V MOSFETs, N-ch MOSFET, 600 V, 0.04 Ω@10V, TO-247, DTMOSⅣ

Technical Specifications

Parameters and characteristics for this part

SpecificationTK62N60W,S1VF
Current - Continuous Drain (Id) (Ta)61.8 A
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Max)180 nC
Input Capacitance (Ciss) (Max)6500 pF
Mounting TypeThrough Hole
Operating Temperature150 °C
Package / CaseTO-247-3
Package NameTO-247
Power Dissipation (Max)400 W
Rds On (Max)40 mOhm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max)3.7 V

Pricing

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

TK62N60W,S1VF | Datasheet
MOSFET Secondary Breakdown
Thermal Design and Attachment of a Thermal Fin: Power MOSFET Application Notes
Hints and Tips for Thermal Design part3
MOSFET Gate Drive Circuit: Power MOSFET Application Notes
Impacts of the dv/dt Rate on MOSFETs: Power MOSFET Application Notes
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
MOSFET Self-Turn-On Phenomenon
Parasitic Oscillation between Parallel Power MOSFETs: Power MOSFET Application Notes
Motor Control (Vacuum Cleaners)
Simplified CFD Model Application Note
Resonant Circuits and Soft Switching
MOSFET Avalanche Ruggedness: Power MOSFET Application Notes
RC Snubbers for Step-Down Converters
Power Factor Correction (PFC) Circuits: Power MOSFET Application Notes
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2
Reverse Recovery Operation and Destruction of MOSFET Body Diode
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Derating of the MOSFET Safe Operating Area
Selecting MOSFETs and Consideration for Circuit Design: Power MOSFET Application Notes
MOSFET SPICE model grade
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Calculating the Temperature of Discrete Semiconductor Devices
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
TK62N60W Data sheet/Japanese
Avalanche energy calculation
Parasitic Oscillation and Ringing: Power MOSFET Application Notes
Electrical Characteristics: Power MOSFET Application Notes
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Maximum Ratings: Power MOSFET Application Notes
Structures and Characteristics: Power MOSFET Application Notes
Selection Guide MOSFETs 2025 Rev1.0