TPH6R003NL,LQ
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 30 V, 0.006 Ω@10V, SOP ADVANCE, U-MOSⅧ-H
TPH6R003NL,LQ
ActiveToshiba Semiconductor and Storage
12V - 300V MOSFETS, N-CH MOSFET, 30 V, 0.006 Ω@10V, SOP ADVANCE, U-MOSⅧ-H
Description
General part information
TPH6R003NL Series
12V - 300V MOSFETS, N-CH MOSFET, 30 V, 0.006 Ω@10V, SOP ADVANCE, U-MOSⅧ-H
Technical Specifications
Parameters and characteristics for this part
| Specification | TPH6R003NL,LQ |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 38 A |
| Drain to Source Voltage (Vdss) | 30 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 17 nC |
| Input Capacitance (Ciss) (Max) | 1400 pF |
| Mounting Type | Surface Mount |
| Operating Temperature | 150 °C |
| Package / Case | 8-PowerVDFN |
| Package Length | 5 mm |
| Package Name | 8-SOP Advance |
| Package Width | 5 mm |
| Power Dissipation (Max) | 1.6 W, 34 W |
| Rds On (Max) | 6 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.3 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
MOSFET Avalanche Ruggedness
Power MOSFET Structure and Characteristics
Power MOSFET Electrical Characteristics
Parasitic Oscillation and Ringing of Power MOSFETs
Power MOSFET Selecting MOSFETs and Consideration for Circuit Design
Impacts of the dv/dt Rate on MOSFETs
Selection Guide 2024 - MOSFETs
MOSFET Parallening (Parasitic Oscillation Between Parallel Power MOSFETs)
Power MOSFET Thermal Design and Attachment of a Thermal Fin
MOSFET Gate Driver Circuit
Power MOSFET Maximum Ratings
Quick Reference Guide for Thermal Design for Power Semiconductor SMD type: Part 2
Avalanche energy calculation
Hints and Tips for Thermal Design for Discrete Semiconductor Devices
Calculating the Temperature of Discrete Semiconductor Devices
Reverse Recovery Operation and Destruction of MOSFET Body Diode
MOSFET SPICE model grade
Motor Control (Vacuum Cleaners)
RC Snubbers for Step-Down Converters
MOSFET Secondary Breakdown
U-MOSⅨ-H 60V Low VDS spike TPH1R306P1
TPH6R003NL Data sheet/English
Resonant Circuits and Soft Switching
Quick Reference Guide for Thermal Design for Discrete Semiconductor Devices
Efficiency Evaluation and Loss Analysis of 300W isolated DC-DC converter
MOSFET Self-Turn-On Phenomenon
Simplified CFD Model Application Note
Hints and Tips for Thermal Design part3
TPH6R003NL Data sheet/Japanese
Efficiency evaluation of Half-bridge DC-DC converter supporting 48V Bus system
Derating of the MOSFET Safe Operating Area
Discrete Semiconductor Devices Hints and Tips for Thermal Design Part 2