Specification	SISA18ADN-T1-GE3

Current - Continuous Drain (Id) (Tc)	38.3 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	21.5 nC
Input Capacitance (Ciss) (Max)	1000 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	3.2 W, 19.8 W
Rds On (Max)	7.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-16 V
Vgs (Max) Positive	20 V
Vgs(th) (Max)	2.4 V

SISA18 Series

Part	Input Capacitance (Ciss) (Max)	FET Type	Current - Continuous Drain (Id) (Ta)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Rds On (Max)	Vgs (Max) Negative	Vgs (Max) Positive	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Gate Charge (Max)	Package Name	Mounting Type	Technology	Package / Case	Power Dissipation (Max)
Vishay Dale SISA18BDN-T1-GE3	680 pF	N-Channel	18 A	60 A	-55 °C	150 °C	10 V	4.5 V	6.83 mOhm 6.83 mOhm	-16 V	20 V	30 V	2.4 V	19 nC	PowerPAK® 1212-8PT	Surface Mount	MOSFET (Metal Oxide)	8-PowerWDFN	3.2 W 36.8 W
Vishay Dale SISA18ADN-T1-GE3	1000 pF	N-Channel		38.3 A	-55 °C	150 °C	10 V	4.5 V	7.5 mOhm	-16 V	20 V	30 V	2.4 V	21.5 nC	PowerPAK® 1212-8	Surface Mount	MOSFET (Metal Oxide)	PowerPAK® 1212-8	3.2 W 19.8 W
Vishay Dale SISA18DN-T1-GE3	1000 pF	N-Channel		38.3 A	-55 °C	150 °C	10 V	4.5 V	7.5 mOhm	-16 V	20 V	30 V	2.4 V	21.5 nC	PowerPAK® 1212-8	Surface Mount	MOSFET (Metal Oxide)	PowerPAK® 1212-8	3.2 W 19.8 W

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