Specification	TLP385(D4-GRH,E

Current - DC Forward (If) (Max)	50 mA
Current - Output / Channel	50 mA
Current Transfer Ratio (Max)	300 %
Current Transfer Ratio (Min)	100 %
Fall Time (Typ)	3 µs
Input Type	DC
Mounting Type	Surface Mount
Number of Channels	1
Operating Temperature (Max)	110 °C
Operating Temperature (Min)	-55 °C
Output Type	Transistor
Package Features	4 Leads
Package Length	0.295 in
Package Name	4 Lead, 6-SO, 6-SOIC
Package Width	7.5 mm
Rise Time (Typ)	2 µs
Turn Off Time (Typ)	3 µs
Turn On Time (Typ)	3 µs
Vce Saturation (Max)	300 mV
Voltage - Forward (Vf) (Typ)	1.25 V
Voltage - Isolation	5000 Vrms
Voltage - Output (Max)	80 V

TLP385 Series

Isolators and Solid State Relays for Enhanced Safety and Efficiency | Toshiba, Photocoupler (phototransistor output), DC input, 5000 Vrms, 4pin SO6L

Part	Input Type	Current - Output / Channel	Mounting Type	Current - DC Forward (If) (Max)	Current Transfer Ratio (Max)	Number of Channels	Voltage - Forward (Vf) (Typ)	Voltage - Output (Max)	Current Transfer Ratio (Min)	Turn On Time (Typ)	Turn Off Time (Typ)	Voltage - Isolation	Output Type	Rise Time (Typ)	Fall Time (Typ)	Package Length	Package Features	Package Name	Package Width	Operating Temperature (Max)	Operating Temperature (Min)	Vce Saturation (Max)
Toshiba Semiconductor and Storage TLP385(D4GL-TL,E	DC	50 mA	Surface Mount	50 mA	600 %	1	1.25 V	80 V	50 %	3 µs	3 µs	5000 Vrms	Transistor	2 µs	3 µs	0.295 in	4 Leads	4 Lead 6-SO 6-SOIC	7.5 mm	110 °C	-55 °C	300 mV
Toshiba Semiconductor and Storage TLP385(BLL-TPL,E	DC	50 mA	Surface Mount	50 mA	400 %	1	1.25 V	80 V	200 %	3 µs	3 µs	5000 Vrms	Transistor	2 µs	3 µs	0.295 in	4 Leads	4 Lead 6-SO 6-SOIC	7.5 mm	110 °C	-55 °C	300 mV
Toshiba Semiconductor and Storage TLP385(D4BLLTL,E	DC	50 mA	Surface Mount	50 mA	400 %	1	1.25 V	80 V	200 %	3 µs	3 µs	5000 Vrms	Transistor	2 µs	3 µs	0.295 in	4 Leads	4 Lead 6-SO 6-SOIC	7.5 mm	110 °C	-55 °C	300 mV
Toshiba Semiconductor and Storage TLP385(GRL-TPL,E	DC	50 mA	Surface Mount	50 mA	200 %	1	1.25 V	80 V	100 %	3 µs	3 µs	5000 Vrms	Transistor	2 µs	3 µs	0.295 in	4 Leads	4 Lead 6-SO 6-SOIC	7.5 mm	110 °C	-55 °C	300 mV
Toshiba Semiconductor and Storage TLP385(GRH-TPL,E	DC	50 mA	Surface Mount	50 mA	300 %	1	1.25 V	80 V	150 %	3 µs	3 µs	5000 Vrms	Transistor	2 µs	3 µs	0.295 in	4 Leads	4 Lead 6-SO 6-SOIC	7.5 mm	110 °C	-55 °C	300 mV
Toshiba Semiconductor and Storage TLP385(TPL,E	DC	50 mA	Surface Mount	50 mA	600 %	1	1.25 V	80 V	50 %	3 µs	3 µs	5000 Vrms	Transistor	2 µs	3 µs	0.295 in	4 Leads	4 Lead 6-SO 6-SOIC	7.5 mm	110 °C	-55 °C	300 mV
Toshiba Semiconductor and Storage TLP385(D4GB-TL,E	DC	50 mA	Surface Mount	50 mA	600 %	1	1.25 V	80 V	100 %	3 µs	3 µs	5000 Vrms	Transistor	2 µs	3 µs	0.295 in	4 Leads	4 Lead 6-SO 6-SOIC	7.5 mm	110 °C	-55 °C	300 mV
Toshiba Semiconductor and Storage TLP385(D4-GRL,E	DC	50 mA	Surface Mount	50 mA	300 %	1	1.25 V	80 V	100 %	3 µs	3 µs	5000 Vrms	Transistor	2 µs	3 µs	0.295 in	4 Leads	4 Lead 6-SO 6-SOIC	7.5 mm	110 °C	-55 °C	300 mV
Toshiba Semiconductor and Storage TLP385(D4GH-TL,E	DC	50 mA	Surface Mount	50 mA	600 %	1	1.25 V	80 V	50 %	3 µs	3 µs	5000 Vrms	Transistor	2 µs	3 µs	0.295 in	4 Leads	4 Lead 6-SO 6-SOIC	7.5 mm	110 °C	-55 °C	300 mV
Toshiba Semiconductor and Storage TLP385(GB-TPL,E	DC	50 mA	Surface Mount	50 mA	600 %	1	1.25 V	80 V	100 %	3 µs	3 µs	5000 Vrms	Transistor	2 µs	3 µs	0.295 in	4 Leads	4 Lead 6-SO 6-SOIC	7.5 mm	110 °C	-55 °C	300 mV

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CAD

3D models and CAD resources for this part

Documents

Technical documentation and resources

TLP385(D4-GRH,E | Datasheet

Glossary of Photocoupler and Photorelay Terms

Photocouplers and Photorelays

Selection Guide Isolators and Solid State Relays 2025Rev1.0

Safety standards for photocouplers

TLP385 Data sheet/Japanese