Isolators and Solid State Relays for Enhanced Safety and Efficiency | Toshiba, Photocoupler (phototransistor output), DC input, 5000 Vrms, 4pin SO6L
Isolators and Solid State Relays for Enhanced Safety and Efficiency | Toshiba, Photocoupler (phototransistor output), DC input, 5000 Vrms, 4pin SO6L
Isolators and Solid State Relays for Enhanced Safety and Efficiency | Toshiba, Photocoupler (phototransistor output), DC input, 5000 Vrms, 4pin SO6L
| Part | Input Type | Current - Output / Channel | Mounting Type | Current - DC Forward (If) (Max) | Current Transfer Ratio (Max) | Number of Channels | Voltage - Forward (Vf) (Typ) | Voltage - Output (Max) | Current Transfer Ratio (Min) | Turn On Time (Typ) | Turn Off Time (Typ) | Voltage - Isolation | Output Type | Rise Time (Typ) | Fall Time (Typ) | Package Length | Package Features | Package Name | Package Width | Operating Temperature (Max) | Operating Temperature (Min) | Vce Saturation (Max) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 Toshiba Semiconductor and Storage | DC | 50 mA | Surface Mount | 50 mA | 600 % | 1 | 1.25 V | 80 V | 50 % | 3 µs | 3 µs | 5000 Vrms | Transistor | 2 µs | 3 µs | 0.295 in | 4 Leads | 4 Lead 6-SO 6-SOIC | 7.5 mm | 110 °C | -55 °C | 300 mV |
Toshiba Semiconductor and Storage | DC | 50 mA | Surface Mount | 50 mA | 400 % | 1 | 1.25 V | 80 V | 200 % | 3 µs | 3 µs | 5000 Vrms | Transistor | 2 µs | 3 µs | 0.295 in | 4 Leads | 4 Lead 6-SO 6-SOIC | 7.5 mm | 110 °C | -55 °C | 300 mV |
Toshiba Semiconductor and Storage | DC | 50 mA | Surface Mount | 50 mA | 400 % | 1 | 1.25 V | 80 V | 200 % | 3 µs | 3 µs | 5000 Vrms | Transistor | 2 µs | 3 µs | 0.295 in | 4 Leads | 4 Lead 6-SO 6-SOIC | 7.5 mm | 110 °C | -55 °C | 300 mV |
 Toshiba Semiconductor and Storage | DC | 50 mA | Surface Mount | 50 mA | 200 % | 1 | 1.25 V | 80 V | 100 % | 3 µs | 3 µs | 5000 Vrms | Transistor | 2 µs | 3 µs | 0.295 in | 4 Leads | 4 Lead 6-SO 6-SOIC | 7.5 mm | 110 °C | -55 °C | 300 mV |
Toshiba Semiconductor and Storage | DC | 50 mA | Surface Mount | 50 mA | 300 % | 1 | 1.25 V | 80 V | 150 % | 3 µs | 3 µs | 5000 Vrms | Transistor | 2 µs | 3 µs | 0.295 in | 4 Leads | 4 Lead 6-SO 6-SOIC | 7.5 mm | 110 °C | -55 °C | 300 mV |
Toshiba Semiconductor and Storage | DC | 50 mA | Surface Mount | 50 mA | 600 % | 1 | 1.25 V | 80 V | 50 % | 3 µs | 3 µs | 5000 Vrms | Transistor | 2 µs | 3 µs | 0.295 in | 4 Leads | 4 Lead 6-SO 6-SOIC | 7.5 mm | 110 °C | -55 °C | 300 mV |
Toshiba Semiconductor and Storage | DC | 50 mA | Surface Mount | 50 mA | 600 % | 1 | 1.25 V | 80 V | 100 % | 3 µs | 3 µs | 5000 Vrms | Transistor | 2 µs | 3 µs | 0.295 in | 4 Leads | 4 Lead 6-SO 6-SOIC | 7.5 mm | 110 °C | -55 °C | 300 mV |
Toshiba Semiconductor and Storage | DC | 50 mA | Surface Mount | 50 mA | 300 % | 1 | 1.25 V | 80 V | 100 % | 3 µs | 3 µs | 5000 Vrms | Transistor | 2 µs | 3 µs | 0.295 in | 4 Leads | 4 Lead 6-SO 6-SOIC | 7.5 mm | 110 °C | -55 °C | 300 mV |
Toshiba Semiconductor and Storage | DC | 50 mA | Surface Mount | 50 mA | 600 % | 1 | 1.25 V | 80 V | 50 % | 3 µs | 3 µs | 5000 Vrms | Transistor | 2 µs | 3 µs | 0.295 in | 4 Leads | 4 Lead 6-SO 6-SOIC | 7.5 mm | 110 °C | -55 °C | 300 mV |
Toshiba Semiconductor and Storage | DC | 50 mA | Surface Mount | 50 mA | 600 % | 1 | 1.25 V | 80 V | 100 % | 3 µs | 3 µs | 5000 Vrms | Transistor | 2 µs | 3 µs | 0.295 in | 4 Leads | 4 Lead 6-SO 6-SOIC | 7.5 mm | 110 °C | -55 °C | 300 mV |