Specification	SIRA99DP-T1-GE3

Current - Continuous Drain (Id) (Ta)	47.9 A
Current - Continuous Drain (Id) (Tc)	195 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Max)	260 nC
Input Capacitance (Ciss) (Max)	10955 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	6.35 W, 104 W
Rds On (Max)	1.7 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-20 V
Vgs (Max) Positive	16 V
Vgs(th) (Max)	2.5 V

SIRA99 Series

Part	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Technology	Package Name	FET Type	Gate Charge (Max)	Package / Case	Vgs (Max) Negative	Vgs (Max) Positive	Rds On (Max)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Operating Temperature (Min)	Operating Temperature (Max)	Power Dissipation (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Mounting Type
Vishay Dale SIRA99DP-T1-GE3	10955 pF	30 V	MOSFET (Metal Oxide)	PowerPAK® SO-8	P-Channel	260 nC	PowerPAK® SO-8	-20 V	16 V	1.7 mOhm	195 A	47.9 A	-55 °C	150 °C	6.35 W 104 W	10 V	4.5 V	2.5 V	Surface Mount

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