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BSB165N15NZ3GXUMA1 - 3-WDSON

BSB165N15NZ3GXUMA1

Unknown
Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 150 V ; DIRECTFET™ M PACKAGE; 16.5 MOHM;

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Search across all available documentation for this part.

BSB165N15NZ3GXUMA1 - 3-WDSON

BSB165N15NZ3GXUMA1

Unknown
Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 150 V ; DIRECTFET™ M PACKAGE; 16.5 MOHM;

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBSB165N15NZ3GXUMA1
Current - Continuous Drain (Id) @ 25°C9 A, 45 A
Drain to Source Voltage (Vdss)150 V
Drive Voltage (Max Rds On, Min Rds On)8 V, 10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]35 nC
Input Capacitance (Ciss) (Max) @ Vds2800 pF
Mounting TypeSurface Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-40 °C
Package / Case3-WDSON
Rds On (Max) @ Id, Vgs16.5 mOhm
Supplier Device PackageCanPAK M™, MG-WDSON-2
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyCut Tape (CT) 1$ 3.56
10$ 2.99
100$ 2.42
500$ 2.15
1000$ 1.84
2000$ 1.74
Digi-Reel® 1$ 3.56
10$ 2.99
100$ 2.42
500$ 2.15
1000$ 1.84
2000$ 1.74
Tape & Reel (TR) 5000$ 1.66

Description

General part information

BSB165 Series

The 150 V OptiMOS™ achieves a reduction in RDS(on)of 40% and of 45% in figure of merit (FOM) compared to the next best competitor. This drastic improvement opens new possibilities like moving from leaded packages to SMD packages or effectively replacing two old parts with one OptiMOS™ part.

Documents

Technical documentation and resources

No documents available