TSM4800N15CX6 RFG

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Taiwan Semiconductor Corporation

MOSFET N-CH 150V 1.4A SOT26

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Taiwan Semiconductor Corporation

MOSFET N-CH 150V 1.4A SOT26

Technical Specifications

Parameters and characteristics for this part

Specification	TSM4800N15CX6 RFG

Current - Continuous Drain (Id) @ 25°C	1.4 A
Drain to Source Voltage (Vdss)	150 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	8 nC
Input Capacitance (Ciss) (Max) @ Vds	332 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SOT-23-6
Power Dissipation (Max)	2.1 W
Rds On (Max) @ Id, Vgs	480 mOhm
Supplier Device Package	SOT-26
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature [Min]	Operating Temperature [Max]	FET Type	Vgs(th) (Max) @ Id	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds
Taiwan Semiconductor Corporation TSM4800N15CX6 RFG	6 V 10 V	-55 °C	150 °C	N-Channel	3.5 V	480 mOhm	150 V	SOT-23-6	SOT-26	1.4 A	2.1 W	Surface Mount	8 nC	MOSFET (Metal Oxide)	20 V	332 pF

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General part information

N-Channel 150 V 1.4A (Tc) 2.1W (Tc) Surface Mount SOT-26

Technical documentation and resources