Specification	SIR104DP-T1-RE3

Current - Continuous Drain (Id) (Ta)	18.3 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	7.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	84 nC
Input Capacitance (Ciss) (Max)	4230 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	100 W, 5.4 W
Rds On (Max)	6.4 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

SIR104 Series

Part	Power Dissipation (Max)	Vgs (Max)	FET Type	Current - Continuous Drain (Id) (Ta)	Package / Case	Gate Charge (Max)	Rds On (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)	Package Name	Mounting Type	Input Capacitance (Ciss) (Max)	Technology	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)
Vishay Dale SIR104DP-T1-RE3	5.4 W 100 W	20 V	N-Channel	18.3 A	PowerPAK® SO-8	84 nC	6.4 mOhm	10 V	7.5 V	3.5 V	PowerPAK® SO-8	Surface Mount	4230 pF	MOSFET (Metal Oxide)	100 V	-55 °C	150 °C
Vishay Dale SIR104ADP-T1-RE3	5.4 W 100 W	20 V	N-Channel	18.8 A	PowerPAK® SO-8	70 nC	6.1 mOhm	10 V	7.5 V	4 V	PowerPAK® SO-8	Surface Mount	3250 pF	MOSFET (Metal Oxide)	100 V	-55 °C	150 °C	81 A

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