Specification	IRF7904PBF

Channel Count	2
Configuration	N-Channel
Configuration - Features	Dual
Current - Continuous Drain (Id) (Maximum)	11 A
Current - Continuous Drain (Id) (Typical)	7.6 A
Drain to Source Voltage (Vdss)	30 V
FET Feature	Logic Level Gate
Gate Charge (Max)	11 nC
Input Capacitance (Ciss) (Max)	910 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC, 8-SO
Package Width	3.9 mm
Power - Max (Value 1)	1.4 W
Power - Max (Value 2)	2 W
Rds On (Max)	16.2 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.25 V

IRF7904 Series

Part	Rds On (Max)	Input Capacitance (Ciss) (Max)	Vgs(th) (Max)	Power - Max (Value 1)	Power - Max (Value 2)	Current - Continuous Drain (Id) (Typical)	Current - Continuous Drain (Id) (Maximum)	FET Feature	Mounting Type	Technology	Package Length	Package Name	Package Width	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Gate Charge (Max)	Channel Count	Configuration	Configuration - Features
INFINEON IRF7904PBF	16.2 mOhm	910 pF	2.25 V	1.4 W	2 W	7.6 A	11 A	Logic Level Gate	Surface Mount	MOSFET (Metal Oxide)	0.154 in	8-SO 8-SOIC	3.9 mm	30 V	-55 °C	150 °C	11 nC	2	N-Channel	Dual
INFINEON IRF7904TRPBF	16.2 mOhm	910 pF	2.25 V	1.4 W	2 W	7.6 A	11 A	Logic Level Gate	Surface Mount	MOSFET (Metal Oxide)	0.154 in	8-SO 8-SOIC	3.9 mm	30 V	-55 °C	150 °C	11 nC	2	N-Channel	Half Bridge

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