Specification	IRS23365DMTRPBF

Channel Type	3-Phase
Current - Peak Output (Sink)	0.38 A
Current - Peak Output (Source)	180 mA
Driven Configuration	Half-Bridge
Fall Time (Typ)	50 ns
Gate Channel	N-Channel
Gate Type	IGBT, N-Channel MOSFET, MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Non-Inverting
Logic Voltage - VIH	2.5 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	6
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-40 °C
Package / Case	48-VFQFN Exposed Pad
Package Length	7 mm
Package Name	48-MLPQ
Package Width	7 mm
Rise Time (Typ)	125 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

IRS23365 Series

Part	Gate Type	Input Type	Fall Time (Typ)	Rise Time (Typ)	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Number of Drivers	Driven Configuration	Operating Temperature (Min)	Operating Temperature (Max)	High Side Voltage - Max (Bootstrap)	Logic Voltage - VIL	Logic Voltage - VIH	Package / Case	Channel Type	Package Name	Package Length	Package Width	Current - Peak Output (Sink)	Current - Peak Output (Source)	Gate Channel	Mounting Type
INFINEON IRS23365DMTRPBF	IGBT MOSFET N-Channel MOSFET	Non-Inverting	50 ns	125 ns	10 VDC	20 V	6	Half-Bridge	-40 °C	150 °C	600 V	0.8 V	2.5 V	48-VFQFN Exposed Pad	3-Phase	48-MLPQ	7 mm	7 mm	0.38 A	180 mA	N-Channel	Surface Mount

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