Specification	SI4914BDY-T1-GE3

Channel Count	2
Configuration	N-Channel
Configuration - Features	Half Bridge
Current - Continuous Drain (Id) (Maximum)	8 A
Current - Continuous Drain (Id) (Typical)	8.4 A
Drain to Source Voltage (Vdss)	30 V
Gate Charge (Max)	10.5 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power - Max (Value 1)	2.7 W
Power - Max (Value 2)	3.1 W
Rds On (Max)	21 mOhm
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max)	2.7 V

SI4914 Series

Part	Mounting Type	Vgs(th) (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Package Name	Power - Max (Value 2)	Power - Max (Value 1)	Current - Continuous Drain (Id) (Maximum)	Current - Continuous Drain (Id) (Typical)	Package Length	Package Width	Technology	Gate Charge (Max)	Drain to Source Voltage (Vdss)	Rds On (Max)	Channel Count	Configuration - Features	Configuration
Vishay Dale SI4914BDY-T1-GE3	Surface Mount	2.7 V	-55 °C	150 °C	8-SOIC	3.1 W	2.7 W	8 A	8.4 A	0.154 in	3.9 mm	MOSFET (Metal Oxide)	10.5 nC	30 V	21 mOhm	2	Half Bridge	N-Channel

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