Specification	SIHA21N60EF-E3

Current - Continuous Drain (Id) (Tc)	21 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	84 nC
Input Capacitance (Ciss) (Max)	2030 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3 Full Pack
Package Name	TO-220 Full Pack
Power Dissipation (Max)	35 W
Rds On (Max)	176 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

SIHA21 Series

Part	Vgs (Max)	FET Type	Power Dissipation (Max)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Package / Case	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Input Capacitance (Ciss) (Max)	Technology	Package Name
Vishay Dale SIHA21N60EF-E3	30 V	N-Channel	35 W	176 mOhm	-55 °C	150 °C	21 A	84 nC	TO-220-3 Full Pack	600 V	4 V	10 V	Through Hole	2030 pF	MOSFET (Metal Oxide)	TO-220 Full Pack
Vishay Dale SIHA21N65EF-E3	30 V	N-Channel	35 W	180 mOhm	-55 °C	150 °C	21 A	106 nC	TO-220-3 Full Pack	650 V	4 V	10 V	Through Hole	2322 pF	MOSFET (Metal Oxide)	TO-220 Full Pack

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources