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IPP65R125C7XKSA1 - TO-220-3

IPP65R125C7XKSA1

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Infineon Technologies

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-220 PACKAGE; 125 MOHM; HIGHEST PERFORMANCE

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IPP65R125C7XKSA1 - TO-220-3

IPP65R125C7XKSA1

Active
Infineon Technologies

COOLMOS™ C7 N-CHANNEL SUPERJUNCTION MOSFET 650 V ; TO-220 PACKAGE; 125 MOHM; HIGHEST PERFORMANCE

Deep-Dive with AI

DocumentsDatasheet

Technical Specifications

Parameters and characteristics for this part

SpecificationIPP65R125C7XKSA1
Current - Continuous Drain (Id) @ 25°C18 A
Drain to Source Voltage (Vdss)650 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]35 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]1670 pF
Mounting TypeThrough Hole
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseTO-220-3
Power Dissipation (Max) [Max]101 W
Rds On (Max) @ Id, Vgs125 mOhm
Supplier Device PackagePG-TO220-3
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 5.00
10$ 3.32
100$ 2.37
500$ 1.96
1000$ 1.89

Description

General part information

IPP65R125 Series

Infineon’sCoolMOS™ C7 superjunction MOSFETseries is a revolutionary step forward in technology, providing the worlds’s lowest RDS(on)/package and, thanks to its low switching losses, efficiency improvements over the full load range.

Documents

Technical documentation and resources