IRL6342TRPBF

Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 14.6 MOHM;

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IRL6342TRPBF

Infineon Technologies

STRONGIRFET™ N-CHANNEL POWER MOSFET ; SO-8 PACKAGE; 14.6 MOHM;

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	IRL6342TRPBF

Current - Continuous Drain (Id) @ 25°C	9.9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 2.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11 nC
Input Capacitance (Ciss) (Max) @ Vds	1025 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-SOIC
Package / Case [x]	0.154 in
Package / Case [y]	3.9 mm
Power Dissipation (Max)	2.5 W
Rds On (Max) @ Id, Vgs	14.6 mOhm
Supplier Device Package	8-SO
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max) @ Id	1.1 V

IRL6342 Series

Part	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max)	Technology	Vgs (Max)	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Package / Case	Package / Case [y]	Package / Case [x]	Supplier Device Package	Vgs(th) (Max) @ Id	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Mounting Type	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs
Infineon Technologies IRL6342TRPBF	9.9 A	2.5 W	MOSFET (Metal Oxide)	12 V	1025 pF	30 V	8-SOIC	3.9 mm	0.154 in	8-SO	1.1 V	N-Channel	2.5 V 4.5 V	11 nC	Surface Mount	-55 °C	150 °C	14.6 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 0.93
		10	$ 0.58
		100	$ 0.38
		500	$ 0.29
		1000	$ 0.26
		2000	$ 0.24
	Digi-Reel®	1	$ 0.93
		10	$ 0.58
		100	$ 0.38
		500	$ 0.29
		1000	$ 0.26
		2000	$ 0.24
	Tape & Reel (TR)	4000	$ 0.22
		8000	$ 0.20
		12000	$ 0.19
		20000	$ 0.19

Description

General part information

IRL6342 Series

The StrongIRFET™ power MOSFET family is optimized for low RDS(on)and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Documents

Technical documentation and resources