Specification	SI4490DY-T1-GE3

Current - Continuous Drain (Id) (Ta)	2.85 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	42 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	1.56 W
Rds On (Max)	80 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2 V

SI4490 Series

Part	Technology	Power Dissipation (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Package Name	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Current - Continuous Drain (Id) (Ta)	Gate Charge (Max)	Vgs (Max)	Package Length	Package Width	FET Type
Vishay Dale SI4490DY-T1-GE3	MOSFET (Metal Oxide)	1.56 W	Surface Mount	200 V	2 V	8-SOIC	80 mOhm	-55 °C	150 °C	6 V	10 V	2.85 A	42 nC	20 V	0.154 in	3.9 mm	N-Channel

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