Specification	TK1R4F04PB,LXGQ

Current - Continuous Drain (Id) (Ta)	160 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On)	6 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	103 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	5500 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-220SM(W)
Power Dissipation (Max)	205 W
Qualification	AEC-Q101
Rds On (Max)	1.9 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

TK1R4F04 Series

Part	Drain to Source Voltage (Vdss)	Package Name	Current - Continuous Drain (Id) (Ta)	Operating Temperature	Gate Charge (Max)	Package / Case	Input Capacitance (Ciss) (Max)	Technology	FET Type	Rds On (Max)	Mounting Type	Vgs(th) (Max)	Vgs (Max)	Grade	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Power Dissipation (Max)	Qualification
Toshiba Semiconductor and Storage TK1R4F04PB,LXGQ	40 V	TO-220SM(W)	160 A	175 °C	103 nC	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	5500 pF	MOSFET (Metal Oxide)	N-Channel	1.9 mOhm	Surface Mount	3 V	20 V	Automotive	6 V	10 V	205 W	AEC-Q101

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