TK1R4F04PB,LXGQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 40V 160A TO220SM

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Toshiba Semiconductor and Storage

MOSFET N-CH 40V 160A TO220SM

Technical Specifications

Parameters and characteristics for this part

Specification	TK1R4F04PB,LXGQ

Current - Continuous Drain (Id) @ 25°C	160 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	6 V, 10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	103 nC
Input Capacitance (Ciss) (Max) @ Vds	5500 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max)	205 W
Rds On (Max) @ Id, Vgs	1.9 mOhm
Supplier Device Package	TO-220SM(W)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3 V

Part	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Vgs(th) (Max) @ Id	Supplier Device Package	Vgs (Max)	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Technology	FET Type	Package / Case
Toshiba Semiconductor and Storage TK1R4F04PB,LXGQ	160 A	175 °C	3 V	TO-220SM(W)	20 V	205 W	6 V 10 V	1.9 mOhm	5500 pF	40 V	Surface Mount	103 nC	MOSFET (Metal Oxide)	N-Channel	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB

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General part information

N-Channel 40 V 160A (Ta) 205W (Tc) Surface Mount TO-220SM(W)

Technical documentation and resources