RN2702TE85LF

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Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W USV

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Toshiba Semiconductor and Storage

TRANS 2PNP PREBIAS 0.2W USV

Technical Specifications

Parameters and characteristics for this part

Specification	RN2702TE85LF

Current - Collector (Ic) (Max) [Max]	100 mA
Current - Collector Cutoff (Max) [Max]	500 nA
DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	50
Frequency - Transition	200 MHz
Mounting Type	Surface Mount
Package / Case	SC-70-5, 5-TSSOP, SOT-353
Power - Max [Max]	200 mW
Resistor - Emitter Base (R2)	10 kOhms
Supplier Device Package	5-SSOP
Transistor Type	2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Vce Saturation (Max) @ Ib, Ic	300 mV
Voltage - Collector Emitter Breakdown (Max) [Max]	50 V

Part	Transistor Type	DC Current Gain (hFE) (Min) @ Ic, Vce [Min]	Power - Max [Max]	Current - Collector (Ic) (Max) [Max]	Resistor - Emitter Base (R2)	Package / Case	Voltage - Collector Emitter Breakdown (Max) [Max]	Vce Saturation (Max) @ Ib, Ic	Frequency - Transition	Mounting Type	Current - Collector Cutoff (Max) [Max]	Supplier Device Package
Toshiba Semiconductor and Storage RN2702TE85LF	2 PNP - Pre-Biased (Dual) (Emitter Coupled)	50	200 mW	100 mA	10 kOhms	5-TSSOP SC-70-5 SOT-353	50 V	300 mV	200 MHz	Surface Mount	500 nA	5-SSOP
Toshiba Semiconductor and Storage RN2702,LF	2 PNP - Pre-Biased (Dual)	50	200 mW	100 mA	10 kOhms	5-TSSOP SC-70-5 SOT-353	50 V	300 mV	200 MHz	Surface Mount	500 nA	USV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Pre-Biased Bipolar Transistor (BJT) 2 PNP - Pre-Biased (Dual) (Emitter Coupled) 50V 100mA 200MHz 200mW Surface Mount 5-SSOP

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