Specification	BS2114F-E2

Channel Type	Independent
Driven Configuration	Low-Side, High-Side
Fall Time (Typ)	30 ns
Gate Channel	N-Channel
Gate Type	IGBT, N-Channel MOSFET, MOSFET
High Side Voltage - Max (Bootstrap)	600 V
Input Type	Inverting
Logic Voltage - VIH	2.6 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	125 °C
Operating Temperature (Min)	-40 °C
Package Length	0.173 in
Package Name	8-SOIC, 8-SOP
Package Width	4.4 mm
Rise Time (Typ)	30 ns
Voltage - Supply (Maximum)	20 V
Voltage - Supply (Minimum)	10 VDC

BS2114 Series

Part	Gate Type	Package Length	Package Name	Package Width	Mounting Type	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)	Rise Time (Typ)	Fall Time (Typ)	Driven Configuration	Channel Type	Logic Voltage - VIH	Logic Voltage - VIL	Operating Temperature (Max)	Operating Temperature (Min)	Gate Channel	High Side Voltage - Max (Bootstrap)	Input Type	Number of Drivers
Rohm Semiconductor BS2114F-E2	IGBT MOSFET N-Channel MOSFET	0.173 in	8-SOIC 8-SOP	4.4 mm	Surface Mount	10 VDC	20 V	30 ns	30 ns	High-Side Low-Side	Independent	2.6 V	0.8 V	125 °C	-40 °C	N-Channel	600 V	Inverting	2

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