Specification	SSM3K310T(TE85L,F)

Current - Continuous Drain (Id) (Ta)	5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.5 V
Drive Voltage (Min Rds On)	4 V
FET Type	N-Channel
Gate Charge (Max)	14.8 nC
Input Capacitance (Ciss) (Max)	1120 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	TO-236-3, SOT-23-3, SC-59
Package Name	TSM
Power Dissipation (Max)	700 mW
Rds On (Max)	28 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V

SSM3K310 Series

Part	Package / Case	Current - Continuous Drain (Id) (Ta)	Gate Charge (Max)	Mounting Type	Vgs (Max)	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Technology	Drain to Source Voltage (Vdss)	FET Type	Package Name	Rds On (Max)	Drive Voltage (Max Rds On)	Drive Voltage (Min Rds On)	Operating Temperature
Toshiba Semiconductor and Storage SSM3K310T(TE85L,F)	SC-59 SOT-23-3 TO-236-3	5 A	14.8 nC	Surface Mount	10 V	700 mW	1120 pF	MOSFET (Metal Oxide)	20 V	N-Channel	TSM	28 mOhm	1.5 V	4 V	150 °C

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