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FF300R12KT3EHOSA1 - 62mmFF1682170244

FF300R12KT3EHOSA1

NRND
Infineon Technologies

THE FF300R12KT3_E IS A COMMON EMITTER IGBT3 - T3 MODULE IN A 62 MM HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1200 V AND 300 A.

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FF300R12KT3EHOSA1 - 62mmFF1682170244

FF300R12KT3EHOSA1

NRND
Infineon Technologies

THE FF300R12KT3_E IS A COMMON EMITTER IGBT3 - T3 MODULE IN A 62 MM HOUSING FOR INDUSTRIAL APPLICATIONS UP TO 1200 V AND 300 A.

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Technical Specifications

Parameters and characteristics for this part

SpecificationFF300R12KT3EHOSA1
Configuration2 Independent
Current - Collector (Ic) (Max) [Max]480 A
Current - Collector Cutoff (Max) [Max]5 mA
InputStandard
Input Capacitance (Cies) @ Vce21 nF
Mounting TypeChassis Mount
NTC ThermistorFalse
Operating Temperature [Max]125 °C
Operating Temperature [Min]-40 °C
Package / CaseModule
Power - Max [Max]1450 W
Supplier Device PackageModule
Vce(on) (Max) @ Vge, Ic2.15 V
Voltage - Collector Emitter Breakdown (Max) [Max]1200 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTray 10$ 149.72

Description

General part information

FF300R12 Series

The half-bridge62 mm1200 V, 300 A Common EmitterIGBT modulesis the right choice for your design. This IGBT module is equipped with a fast TRENCHSTOP™ IGBT3 and Emitter Controlled diode. The 3-level phase leg configurations are possible in combination with a second 62 mm half-bridge module (e.g.FF300R12KT3). This product is also available withThermal Interface Materialpre-applied:FF300R12KT3P_E