Specification	SI4590DY-T1-GE3

Configuration	N, P-Channel
Current - Continuous Drain (Id) (Maximum)	2.8 A
Current - Continuous Drain (Id) (Typical)	3.4 A
Drain to Source Voltage (Vdss)	100 V
Gate Charge (Max)	11.5 nC, 11.5 nC
Input Capacitance (Ciss) (Max)	360 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power - Max (Value 1)	2.4 W
Power - Max (Value 2)	3.4 W
Rds On (Max)	57 mOhm
Vgs(th) (Max)	2.5 V

SI4590 Series

Part	Package Name	Input Capacitance (Ciss) (Max)	Package Length	Package Width	Power - Max (Value 2)	Power - Max (Value 1)	Vgs(th) (Max)	Configuration	Gate Charge (Max)	Mounting Type	Drain to Source Voltage (Vdss)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Maximum)	Current - Continuous Drain (Id) (Typical)	Rds On (Max)
Vishay Dale SI4590DY-T1-GE3	8-SOIC	360 pF	0.154 in	3.9 mm	3.4 W	2.4 W	2.5 V	N P-Channel	11.5 nC 11.5 nC	Surface Mount	100 V	-55 °C	150 °C	2.8 A	3.4 A	57 mOhm

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