Specification	IPI60R385CPXKSA1

Current - Continuous Drain (Id) (Tc)	9 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	22 nC
Input Capacitance (Ciss) (Max)	790 pF
Mounting Type	Through Hole
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-262AA, I2PAK, TO-262-3 Long Leads
Package Name	PG-TO262-3
Power Dissipation (Max)	83 W
Rds On (Max)	385 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

IPI60R Series

Part	Vgs (Max)	FET Type	Gate Charge (Max)	Power Dissipation (Max)	Rds On (Max)	Package Name	Vgs(th) (Max)	Mounting Type	Package / Case	Technology	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Drain to Source Voltage (Vdss)
INFINEON IPI60R250CPAKSA1	20 V	N-Channel	35 nC	104 W	250 mOhm	PG-TO262-3	3.5 V	Through Hole	I2PAK TO-262-3 Long Leads TO-262AA	MOSFET (Metal Oxide)	10 V	1200 pF	12 A	-55 °C	150 °C	650 V
INFINEON IPI60R600CPAKSA1	20 V	N-Channel	27 nC	60 W	600 mOhm	PG-TO262-3	3.5 V	Through Hole	I2PAK TO-262-3 Long Leads TO-262AA	MOSFET (Metal Oxide)	10 V	550 pF	6.1 A	-55 °C	150 °C	600 V
INFINEON IPI60R520CPAKSA1	20 V	N-Channel	31 nC	66 W	520 mOhm	PG-TO262-3	3.5 V	Through Hole	I2PAK TO-262-3 Long Leads TO-262AA	MOSFET (Metal Oxide)	10 V	630 pF	6.8 A	-55 °C	150 °C	600 V
INFINEON IPI60R385CPXKSA1	20 V	N-Channel	22 nC	83 W	385 mOhm	PG-TO262-3	3.5 V	Through Hole	I2PAK TO-262-3 Long Leads TO-262AA	MOSFET (Metal Oxide)	10 V	790 pF	9 A	-55 °C	150 °C	650 V

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