Description
General part information
IRS2005 Series
EiceDRIVER™ 200 Vhigh and low sidegate driver ICwith typical 0.29 A source and 0.6 A sink currents in 8 Lead SOIC package for IGBTs and MOSFETs. Also available in 14 Lead MLPQ 4x4 package. The IRS2005 is a200 V level shift junction isolated MOSFET driverwith dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The logic input is compatible with standard CMOS or LSTTL output, down to 3.3 V logic. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET in the high side configuration which operates up to 200 V. Propagation delays are matched to simplify the HVIC’s use in high frequency applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | IRS2005STRPBF |
|---|---|
| Channel Type | Independent |
| Current - Peak Output (Sink) | 600 mA |
| Current - Peak Output (Source) | 290 mA |
| Driven Configuration | Half-Bridge |
| Fall Time (Typ) | 30 ns |
| Gate Channel | N-Channel |
| Gate Type | IGBT, MOSFET, N-Channel MOSFET |
| High Side Voltage - Max (Bootstrap) | 200 V |
| Input Type | Non-Inverting |
| Logic Voltage - VIH | 2.5 V |
| Logic Voltage - VIL | 0.8 V |
| Mounting Type | Surface Mount |
| Number of Drivers | 2 |
| Operating Temperature (Max) | 150 °C |
| Operating Temperature (Min) | -40 °C |
| Package Length | 0.154 in |
| Package Name | 8-SOIC |
| Package Width | 3.9 mm |
| Rise Time (Typ) | 70 ns |
| Voltage - Supply (Maximum) | 20 V |
| Voltage - Supply (Minimum) | 10 VDC |
Pricing
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CAD
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