Specification	SIHD2N80E-GE3

Current - Continuous Drain (Id) (Tc)	2.8 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	19.6 nC
Input Capacitance (Ciss) (Max)	315 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	TO-252AA
Power Dissipation (Max)	62.5 W
Rds On (Max)	2.75 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max)	4 V

SIHD E Series

Part	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Max)	Rds On (Max)	Input Capacitance (Ciss) (Max)	Technology	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Package Name	Operating Temperature (Min)	Operating Temperature (Max)	Vgs (Max)	Package / Case	Vgs(th) (Max)	FET Type	Current - Continuous Drain (Id) (Tc)	Mounting Type
Vishay Dale SIHD2N80E-GE3	10 V	19.6 nC	2.75 Ohm	315 pF	MOSFET (Metal Oxide)	62.5 W	800 V	TO-252AA	-55 °C	150 °C	30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	4 V	N-Channel	2.8 A	Surface Mount
Vishay Dale SIHD240N60E-GE3	10 V	23 nC	240 mOhm	783 pF 783 pF	MOSFET (Metal Oxide)	78 W	600 V	TO-252AA	-55 °C	150 °C	30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	5 V	N-Channel	12 A	Surface Mount

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