STD2NK70Z-1

Obsolete

STMicroelectronics

MOSFET N-CH 700V 1.6A IPAK

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Obsolete

STMicroelectronics

MOSFET N-CH 700V 1.6A IPAK

Technical Specifications

Parameters and characteristics for this part

Specification	STD2NK70Z-1

Current - Continuous Drain (Id) @ 25°C	1.6 A
Drain to Source Voltage (Vdss)	700 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	11.4 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	280 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	IPAK, TO-251-3 Short Leads, TO-251AA
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	7 Ohm
Supplier Device Package	IPAK
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4.5 V

Part	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Drain to Source Voltage (Vdss)	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Technology	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Package / Case	Supplier Device Package
STMicroelectronics STD2NK70Z-1	7 Ohm	280 pF	1.6 A	N-Channel	700 V	-55 °C	150 °C	Through Hole	11.4 nC	MOSFET (Metal Oxide)	30 V	10 V	4.5 V	45 W	IPAK TO-251-3 Short Leads TO-251AA	IPAK

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 700 V 1.6A (Tc) 45W (Tc) Through Hole IPAK

Technical documentation and resources