Specification	IXTP110N055T2

Current - Continuous Drain (Id) (Tc)	110 A
Drain to Source Voltage (Vdss)	55 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	57 nC, 57 nC
Input Capacitance (Ciss) (Max)	3060 pF
Mounting Type	Through Hole
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	TO-220-3
Package Name	TO-220-3
Power Dissipation (Max)	180 W
Rds On (Max)	6.6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	4 V

IXTP110 Series

Part	Vgs (Max)	Gate Charge (Max)	Current - Continuous Drain (Id) (Tc)	Technology	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Mounting Type	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max)	Power Dissipation (Max)	Drain to Source Voltage (Vdss)	Vgs(th) (Max)	Package / Case	Package Name
LITTELFUSE IXTP110N055T2	20 V	57 nC 57 nC	110 A	MOSFET (Metal Oxide)	6.6 mOhm	-55 °C	175 °C	N-Channel	Through Hole	10 V	3060 pF	180 W	55 V	4 V	TO-220-3	TO-220-3
LITTELFUSE IXTP110N055T2	20 V	57 nC 57 nC	110 A	MOSFET (Metal Oxide)	6.6 mOhm	-55 °C	175 °C	N-Channel	Through Hole	10 V	3060 pF	180 W	55 V	4 V	TO-220-3	TO-220-3
LITTELFUSE IXTP110N055T	20 V	67 nC	110 A	MOSFET (Metal Oxide)	7 mOhm	-55 °C	175 °C	N-Channel	Through Hole	10 V	3080 pF	230 W	55 V	4 V	TO-220-3	TO-220-3

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