Specification	RJK4532DPD-00#J2

Current - Continuous Drain (Id) (Ta)	4 A
Drain to Source Voltage (Vdss)	450 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	9 nC
Input Capacitance (Ciss) (Max)	280 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Package Name	MP-3A
Power Dissipation (Max)	40.3 W
Rds On (Max)	2.3 Ohm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

RJK4532DPD Series

Nch Single Power Mosfet 450V 4A 2300Mohm Mp-3A/To-252

Part	FET Type	Technology	Power Dissipation (Max)	Current - Continuous Drain (Id) (Ta)	Rds On (Max)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Operating Temperature	Vgs (Max)	Package / Case	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Package Name
Renesas Electronics Corporation RJK4532DPD-00#J2	N-Channel	MOSFET (Metal Oxide)	40.3 W	4 A	2.3 Ohm	280 pF	9 nC	150 °C	30 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	Surface Mount	450 V	10 V	MP-3A

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