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Description

General part information

NX5008NBKM Series

N-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006-3 (SOT883) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Technical Specifications

Parameters and characteristics for this part

SpecificationNX5008NBKMYL
Current - Continuous Drain (Id) (Ta)350 mA
Drain to Source Voltage (Vdss)50 V
FET TypeN-Channel
Gate Charge (Max)0.7 nC, 0.7 nC
Input Capacitance (Ciss) (Max)29 pF
Mounting TypeSurface Mount
Operating Temperature (Max)150 °C
Operating Temperature (Min)-55 °C
Package / CaseSC-101, SOT-883
Package NameSOT-883
Power Dissipation (Max)350 mW, 2.8 W
Rds On (Max)2.8 Ohm
TechnologyMOSFET (Metal Oxide)
Vgs (Max)8 V
Vgs(th) (Max)900 mV

Pricing

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CAD

3D models and CAD resources for this part