STL26N30M8

Obsolete

STMicroelectronics

MOSFET N-CH 300V 23A POWERFLAT

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STL26N30M8

Obsolete

STMicroelectronics

MOSFET N-CH 300V 23A POWERFLAT

Deep-Dive with AI

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	STL26N30M8

Current - Continuous Drain (Id) @ 25°C	23 A
Drain to Source Voltage (Vdss)	300 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	30.8 nC
Input Capacitance (Ciss) (Max) @ Vds	1430 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerVDFN
Power Dissipation (Max) [Max]	114 W
Rds On (Max) @ Id, Vgs	89 mOhm
Supplier Device Package	PowerFlat™ (5x6)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	25 V
Vgs(th) (Max) @ Id	5 V

STL26N60DM6 Series

N-channel 600 V, 175 mOhm typ., 15 A MDmesh DM6 Power MOSFET in a PowerFLAT 8x8 HV package

Part	FET Type	Technology	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Package / Case	Supplier Device Package	Rds On (Max) @ Id, Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Power Dissipation (Max) [Max]	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs [Max]
STMicroelectronics STL26N30M8	N-Channel	MOSFET (Metal Oxide)	23 A	30.8 nC	300 V	8-PowerVDFN	PowerFlat™ (5x6)	89 mOhm	-55 °C	150 °C	25 V	10 V	1430 pF	Surface Mount	114 W	5 V
STMicroelectronics STL26N60DM6	N-Channel	MOSFET (Metal Oxide)	15 A		600 V	8-PowerVDFN	PowerFlat™ (8x8) HV	215 mOhm	-55 °C	150 °C	25 V	10 V	940 pF	Surface Mount	110 W	4.75 V	24 nC

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

STL26N60DM6 Series

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fast-recovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on)per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.

Documents

Technical documentation and resources

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