
BUK7Y6R0-60EX
ActiveNexperia USA Inc.
N-CHANNEL 60 V, 6.0 MΩ STANDARD LEVEL MOSFET IN LFPAK56

BUK7Y6R0-60EX
ActiveNexperia USA Inc.
N-CHANNEL 60 V, 6.0 MΩ STANDARD LEVEL MOSFET IN LFPAK56
Description
General part information
BUK7Y6 Series
Standard level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
Technical Specifications
Parameters and characteristics for this part
| Specification | BUK7Y6R0-60EX |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 100 A |
| Drain to Source Voltage (Vdss) | 60 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10 V |
| FET Type | N-Channel |
| Gate Charge (Max) | 45.4 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 4021 pF |
| Mounting Type | Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | SOT-669, SC-100 |
| Package Name | LFPAK56, Power-SO8 |
| Power Dissipation (Max) | 195 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 6 mOhm, 6 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 4 V |
Pricing
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CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
Using power MOSFETs in parallel
Power MOSFET frequently asked questions and answers
Reflow soldering profile
plastic, single-ended surface-mounted package; 4 terminals
LFPAK MOSFET thermal design guide, Chinese version
Understanding power MOSFET data sheet parameters
RC Thermal Models
Using Power MOSFET Zth Curves
LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientation
LFPAK MOSFET thermal design guide - Part 2
Designing RC Snubbers
BUK7Y6R0-60E Thermal design model
Understanding power MOSFET data sheet parameters
plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body
Wave soldering profile
Failure signature of Electrical Overstress on Power MOSFETs
Nexperia package poster
Questions about package outline drawings
Power MOSFET single-shot and repetitive avalanche ruggedness rating