Specification	SSM3K361R,LF

Current - Continuous Drain (Id) (Ta)	3.5 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	3.2 nC
Input Capacitance (Ciss) (Max)	430 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SOT-23-3 Flat Leads
Package Name	SOT-23F
Power Dissipation (Max)	1.2 W
Rds On (Max)	69 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.5 V

SSM3K361R Series

High-Speed, Low-Loss Solutions | Toshiba MOSFETs, N-ch MOSFET, 100 V, 3.5 A, 0.069 Ω@10V, SOT-23F

Part	Qualification	FET Type	Vgs (Max)	Rds On (Max)	Technology	Package Name	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Operating Temperature	Grade	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Mounting Type	Gate Charge (Max)	Vgs(th) (Max)	Power Dissipation (Max)	Current - Continuous Drain (Id) (Ta)	Package / Case
Toshiba Semiconductor and Storage SSM3K361R,LXHF	AEC-Q101	N-Channel	20 V	69 mOhm	MOSFET (Metal Oxide)	SOT-23F	430 pF	100 V	175 °C	Automotive	10 V	4.5 V	Surface Mount	3.2 nC	2.5 V	1.2 W	3.5 A	SOT-23-3 Flat Leads
Toshiba Semiconductor and Storage SSM3K361R,LF		N-Channel	20 V	69 mOhm	MOSFET (Metal Oxide)	SOT-23F	430 pF	100 V	175 °C		10 V	4.5 V	Surface Mount	3.2 nC	2.5 V	1.2 W	3.5 A	SOT-23-3 Flat Leads

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