Specification	SIRA20BDP-T1-GE3

Current - Continuous Drain (Id) (Ta)	82 A
Current - Continuous Drain (Id) (Tc)	335 A
Drain to Source Voltage (Vdss)	25 V
FET Type	N-Channel
Gate Charge (Max)	186 nC
Input Capacitance (Ciss) (Max)	9950 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	104 W, 6.3 W
Rds On (Max)	0.58 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max) Negative	-12 V
Vgs (Max) Positive	16 V
Vgs(th) (Max)	2.1 V

SIRA20 Series

Part	Power Dissipation (Max)	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Vgs(th) (Max)	Package / Case	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Gate Charge (Max)	Package Name	FET Type	Drain to Source Voltage (Vdss)	Mounting Type	Vgs (Max) Negative	Vgs (Max) Positive	Input Capacitance (Ciss) (Max)
Vishay Dale SIRA20BDP-T1-GE3	6.3 W 104 W	MOSFET (Metal Oxide)	-55 °C	150 °C	0.58 mOhm	2.1 V	PowerPAK® SO-8	335 A	82 A	186 nC	PowerPAK® SO-8	N-Channel	25 V	Surface Mount	-12 V	16 V	9950 pF

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