Specification	SQJ142EP-T1_GE3

Current - Continuous Drain (Id) (Tc)	167 A
Drain to Source Voltage (Vdss)	40 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	45 nC
Grade	Automotive
Input Capacitance (Ciss) (Max)	2650 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SO-8
Package Name	PowerPAK® SO-8
Power Dissipation (Max)	191 W
Qualification	AEC-Q101
Rds On (Max)	3.6 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3.5 V

SQJ142 Series

Part	Mounting Type	Power Dissipation (Max)	Current - Continuous Drain (Id) (Tc)	Operating Temperature (Min)	Operating Temperature (Max)	Rds On (Max)	Vgs (Max)	Input Capacitance (Ciss) (Max)	Drain to Source Voltage (Vdss)	Technology	Package / Case	Qualification	Package Name	Gate Charge (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Vgs(th) (Max)	Grade	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)
Vishay Dale SQJ142EP-T1_GE3	Surface Mount	191 W	167 A	-55 °C	175 °C	3.6 mOhm	20 V	2650 pF	40 V	MOSFET (Metal Oxide)	PowerPAK® SO-8	AEC-Q101	PowerPAK® SO-8	45 nC	N-Channel	10 V	3.5 V	Automotive
Vishay Dale SQJ142ELP-T1_GE3	Surface Mount	190 W	175 A	-55 °C	175 °C	2.8 mOhm	20 V	3015 pF	40 V	MOSFET (Metal Oxide)	PowerPAK® SO-8	AEC-Q101	PowerPAK® SO-8	55 nC	N-Channel		2.2 V	Automotive	10 V	4.5 V

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