Specification	SIS862DN-T1-GE3

Current - Continuous Drain (Id) (Tc)	40 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	32 nC
Input Capacitance (Ciss) (Max)	1320 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® 1212-8
Package Name	PowerPAK® 1212-8
Power Dissipation (Max)	52 W, 3.7 W
Rds On (Max)	8.5 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	2.6 V

SIS862 Series

Part	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	FET Type	Technology	Power Dissipation (Max)	Input Capacitance (Ciss) (Max)	Gate Charge (Max)	Package Name	Drain to Source Voltage (Vdss)	Rds On (Max)	Vgs(th) (Max)	Vgs (Max)	Current - Continuous Drain (Id) (Tc)	Current - Continuous Drain (Id) (Ta)	Mounting Type	Package / Case
Vishay Dale SIS862ADN-T1-GE3	-55 °C	150 °C	10 V	4.5 V	N-Channel	MOSFET (Metal Oxide)	3.6 W 39 W	1235 pF	30 nC	PowerPAK® 1212-8	60 V	7.2 mOhm	2.5 V	20 V	52 A	15.8 A	Surface Mount	PowerPAK® 1212-8
Vishay Dale SIS862DN-T1-GE3	-55 °C	150 °C	10 V	4.5 V	N-Channel	MOSFET (Metal Oxide)	3.7 W 52 W	1320 pF	32 nC	PowerPAK® 1212-8	60 V	8.5 mOhm	2.6 V	20 V	40 A		Surface Mount	PowerPAK® 1212-8

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