Specification	SI4894BDY-T1-E3

Current - Continuous Drain (Id) (Ta)	8.9 A
Drain to Source Voltage (Vdss)	30 V
Drive Voltage (Max Rds On)	4.5 V
Drive Voltage (Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Max)	38 nC
Input Capacitance (Ciss) (Max)	1580 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package Length	0.154 in
Package Name	8-SOIC
Package Width	3.9 mm
Power Dissipation (Max)	1.4 W
Rds On (Max)	11 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max)	3 V

SI4894 Series

Part	Power Dissipation (Max)	Current - Continuous Drain (Id) (Ta)	Drain to Source Voltage (Vdss)	Package Length	Package Name	Package Width	Input Capacitance (Ciss) (Max)	Vgs (Max)	Vgs(th) (Max)	Mounting Type	FET Type	Technology	Operating Temperature (Min)	Operating Temperature (Max)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Gate Charge (Max)	Rds On (Max)
Vishay Dale SI4894BDY-T1-E3	1.4 W	8.9 A	30 V	0.154 in	8-SOIC	3.9 mm	1580 pF	20 V	3 V	Surface Mount	N-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C	10 V	4.5 V	38 nC	11 mOhm
Vishay Dale SI4894BDY-T1-GE3	1.4 W	8.9 A	30 V	0.154 in	8-SOIC	3.9 mm	1580 pF	20 V	3 V	Surface Mount	N-Channel	MOSFET (Metal Oxide)	-55 °C	150 °C	10 V	4.5 V	38 nC	11 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Create a free account to access distributor pricing data.

3D models and CAD resources for this part

Technical documentation and resources