AOW125A60

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 28A TO262

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Alpha & Omega Semiconductor Inc.

MOSFET N-CH 600V 28A TO262

Technical Specifications

Parameters and characteristics for this part

Specification	AOW125A60

Current - Continuous Drain (Id) @ 25°C	28 A
Drain to Source Voltage (Vdss)	600 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	39 nC
Input Capacitance (Ciss) (Max) @ Vds	2993 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	TO-262AA, TO-262-3 Long Leads, I2PAK
Power Dissipation (Max)	312.5 W
Rds On (Max) @ Id, Vgs	125 mOhm
Supplier Device Package	TO-262
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4.5 V

Part	Mounting Type	Rds On (Max) @ Id, Vgs	FET Type	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Current - Continuous Drain (Id) @ 25°C	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Technology	Supplier Device Package	Drain to Source Voltage (Vdss)	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Package / Case	Vgs(th) (Max) @ Id
Alpha & Omega Semiconductor Inc. AOW125A60	Through Hole	125 mOhm	N-Channel	-55 °C	150 °C	312.5 W	28 A	39 nC	2993 pF	MOSFET (Metal Oxide)	TO-262	600 V	20 V	10 V	I2PAK TO-262-3 Long Leads TO-262AA	4.5 V

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General part information

N-Channel 600 V 28A (Tc) 312.5W (Tc) Through Hole TO-262

Technical documentation and resources