TSUP10M60SH S1G

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Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 10A SMPC4.6U

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Taiwan Semiconductor Corporation

DIODE SCHOTTKY 60V 10A SMPC4.6U

Technical Specifications

Parameters and characteristics for this part

Specification	TSUP10M60SH S1G

Capacitance @ Vr, F	658 pF
Current - Average Rectified (Io)	10 A
Current - Reverse Leakage @ Vr	250 µA
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	3-PowerDFN, TO-277
Qualification	AEC-Q101
Speed	200 mA, 500 ns
Supplier Device Package	SMPC4.6U
Technology	Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	60 V
Voltage - Forward (Vf) (Max) @ If	640 mV

Part	Current - Average Rectified (Io)	Capacitance @ Vr, F	Qualification	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Voltage - DC Reverse (Vr) (Max) [Max]	Grade	Current - Reverse Leakage @ Vr	Technology	Speed	Package / Case	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package
Taiwan Semiconductor Corporation TSUP10M60SH S1G	10 A	658 pF	AEC-Q101	175 ░C	-55 C	Surface Mount	60 V	Automotive	250 µA	Schottky	200 mA 500 ns	3-PowerDFN TO-277	640 mV	SMPC4.6U
Taiwan Semiconductor Corporation TSUP10M45SH	10 A	1099 pF	AEC-Q101	175 ░C	-55 C	Surface Mount	45 V	Automotive	200 µA	Schottky	200 mA 500 ns	3-PowerDFN TO-277	600 mV	SMPC4.6U

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General part information

Diode 60 V 10A Surface Mount SMPC4.6U

Technical documentation and resources