Specification	SIA433EDJ-T1-GE3

Current - Continuous Drain (Id) (Tc)	12 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On)	1.8 V
Drive Voltage (Min Rds On)	4.5 V
FET Type	P-Channel
Gate Charge (Max)	75 nC
Mounting Type	Surface Mount
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	PowerPAK® SC-70-6
Package Name	PowerPAK® SC-70-6
Power Dissipation (Max)	3.5 W, 19 W
Rds On (Max)	18 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	12 V
Vgs(th) (Max)	1.2 V

SIA433 Series

Part	Vgs (Max)	Mounting Type	Technology	Package / Case	Current - Continuous Drain (Id) (Tc)	Gate Charge (Max)	Package Name	Power Dissipation (Max)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	FET Type	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Vgs(th) (Max)
Vishay Dale SIA433EDJ-T1-GE3	12 V	Surface Mount	MOSFET (Metal Oxide)	PowerPAK® SC-70-6	12 A	75 nC	PowerPAK® SC-70-6	3.5 W 19 W	18 mOhm	-55 °C	150 °C	P-Channel	20 V	4.5 V	1.8 V	1.2 V

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