IXFA5N50P3

Obsolete

IXYS

MOSFET N-CH 500V 5A TO263

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Obsolete

IXYS

MOSFET N-CH 500V 5A TO263

Technical Specifications

Parameters and characteristics for this part

Specification	IXFA5N50P3

Current - Continuous Drain (Id) @ 25°C	5 A
Drain to Source Voltage (Vdss)	500 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	6.9 nC
Input Capacitance (Ciss) (Max) @ Vds	370 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263AB, TO-263-3
Power Dissipation (Max) [Max]	114 W
Rds On (Max) @ Id, Vgs	1.65 Ohm
Supplier Device Package	TO-263AA (IXFA)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V

Part	Package / Case	Vgs (Max)	Technology	FET Type	Current - Continuous Drain (Id) @ 25°C	Power Dissipation (Max) [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs	Drain to Source Voltage (Vdss)	Mounting Type	Supplier Device Package	Operating Temperature [Min]	Operating Temperature [Max]	Rds On (Max) @ Id, Vgs
IXYS IXFA5N50P3	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	30 V	MOSFET (Metal Oxide)	N-Channel	5 A	114 W	370 pF	10 V	6.9 nC	500 V	Surface Mount	TO-263AA (IXFA)	-55 °C	150 °C	1.65 Ohm

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 500 V 5A (Tc) 114W (Tc) Surface Mount TO-263AA (IXFA)

Technical documentation and resources

No documents available