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CY14B116N-ZSP25XI

CY14B116N-ZSP25XI

Active
INFINEON

NVSRAM, 16 MBIT, 1M X 16BIT, 25 NS READ/WRITE, PARALLEL, 2.7 V TO 3.6 V, TSOP-II-54

CY14B116N-ZSP25XI

CY14B116N-ZSP25XI

Active
INFINEON

NVSRAM, 16 MBIT, 1M X 16BIT, 25 NS READ/WRITE, PARALLEL, 2.7 V TO 3.6 V, TSOP-II-54

Description

General part information

CY14B116 Series

CY14B116N-ZSP25XI is a CY14B116N fast SRAM, with a nonvolatile element in each memory cell. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world’s most reliable nonvolatile memory. The SRAM can be read and written an infinite number of times. The nonvolatile data residing in the nonvolatile elements do not change when data is written to the SRAM. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory.

Technical Specifications

Parameters and characteristics for this part

SpecificationCY14B116N-ZSP25XI
Access Time25 ns
Memory Depth1 M
Memory FormatNVSRAM
Memory Interface (Type)Parallel
Memory Size16 Mb
Memory TypeNon-Volatile
Memory Width16 bit
Mounting TypeSurface Mount
Operating Temperature (Max)85 °C
Operating Temperature (Min)-40 °C
Package Length10.16 mm
Package Name54-TSOP, 54-TSOP II
Package Width10.16 mm
TechnologyNVSRAM (Non-Volatile SRAM)
Voltage - Supply (Maximum)3.6 V
Voltage - Supply (Minimum)2.7 V
Write Cycle Time - Page25 ns
Write Cycle Time - Word25 ns

Pricing

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