D126A45CXPSA1

Obsolete

Infineon Technologies

DIODE GEN PURP 4.5KV 200A

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Obsolete

Infineon Technologies

DIODE GEN PURP 4.5KV 200A

Technical Specifications

Parameters and characteristics for this part

Specification	D126A45CXPSA1

Current - Average Rectified (Io)	200 A
Current - Reverse Leakage @ Vr	30 mA
Mounting Type	Stud Mount
Operating Temperature - Junction [Max]	160 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	Stud, DO-8, DO-205AA
Speed	Standard Recovery >500ns
Speed	200 mA
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	4500 V

Part	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Mounting Type	Speed	Speed	Current - Reverse Leakage @ Vr	Technology	Package / Case	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]
Infineon Technologies D126A45CXPSA1	-40 °C	160 °C	Stud Mount	Standard Recovery >500ns	200 mA	30 mA	Standard	DO-205AA DO-8 Stud	200 A	4500 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode 4500 V 200A Stud Mount

Technical documentation and resources

No documents available