Specification	IXDI502D1T/R

Channel Type	Independent
Current - Peak Output (Sink)	2 A
Current - Peak Output (Source)	2 A
Driven Configuration	Low-Side
Fall Time (Typ)	6.5 ns
Gate Channel	N-Channel, P-Channel
Gate Type	IGBT, N-Channel, P-Channel MOSFET, MOSFET
Input Type	Inverting
Logic Voltage - VIH	3 V
Logic Voltage - VIL	0.8 V
Mounting Type	Surface Mount
Number of Drivers	2
Operating Temperature (Max)	150 °C
Operating Temperature (Min)	-55 °C
Package / Case	6-VDFN Exposed Pad
Package Length	4 mm
Package Name	6-DFN
Package Width	5 mm
Rise Time (Typ)	7.5 ns
Voltage - Supply (Maximum)	30 VDC
Voltage - Supply (Minimum)	4.5 V

IXDI502 Series

Part	Gate Type	Package / Case	Package Name	Package Length	Package Width	Operating Temperature (Min)	Operating Temperature (Max)	Fall Time (Typ)	Rise Time (Typ)	Number of Drivers	Channel Type	Driven Configuration	Input Type	Current - Peak Output (Sink)	Current - Peak Output (Source)	Mounting Type	Logic Voltage - VIL	Logic Voltage - VIH	Gate Channel	Voltage - Supply (Minimum)	Voltage - Supply (Maximum)
LITTELFUSE IXDI502D1T/R	IGBT MOSFET N-Channel P-Channel MOSFET	6-VDFN Exposed Pad	6-DFN	4 mm	5 mm	-55 °C	150 °C	6.5 ns	7.5 ns	2	Independent	Low-Side	Inverting	2 A	2 A	Surface Mount	0.8 V	3 V	N-Channel P-Channel	4.5 V	30 VDC
LITTELFUSE IXDI502SIA	IGBT MOSFET N-Channel P-Channel MOSFET		8-SOIC	0.154 in	3.9 mm	-55 °C	150 °C	6.5 ns	7.5 ns	2	Independent	Low-Side	Inverting	2 A	2 A	Surface Mount	0.8 V	3 V	N-Channel P-Channel	4.5 V	30 VDC
LITTELFUSE IXDI502SIAT/R	IGBT MOSFET N-Channel P-Channel MOSFET		8-SOIC	0.154 in	3.9 mm	-55 °C	150 °C	6.5 ns	7.5 ns	2	Independent	Low-Side	Inverting	2 A	2 A	Surface Mount	0.8 V	3 V	N-Channel P-Channel	4.5 V	30 VDC
LITTELFUSE IXDI502PI	IGBT MOSFET N-Channel P-Channel MOSFET		8-DIP	0.3 in	7.62 mm	-55 °C	150 °C	6.5 ns	7.5 ns	2	Independent	Low-Side	Inverting	2 A	2 A	Through Hole	0.8 V	3 V	N-Channel P-Channel	4.5 V	30 VDC

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