BSZ150N10LS3GATMA1

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Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 100 V ; PQFN 3.3 X 3.3 PACKAGE; 15 MOHM;

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BSZ150N10LS3GATMA1

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Infineon Technologies

OPTIMOS™ 3 N-CHANNEL POWER MOSFET 100 V ; PQFN 3.3 X 3.3 PACKAGE; 15 MOHM;

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	BSZ150N10LS3GATMA1

Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V, 4.5 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	35 nC
Input Capacitance (Ciss) (Max) @ Vds	2500 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	8-PowerTDFN
Power Dissipation (Max)	63 W, 2.1 W
Rds On (Max) @ Id, Vgs	15 mOhm
Supplier Device Package	PG-TSDSON-8
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2.1 V

BSZ150 Series

Part	Technology	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Operating Temperature [Min]	Operating Temperature [Max]	Mounting Type	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Vgs (Max)	Supplier Device Package	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs
Infineon Technologies BSZ150N10LS3GATMA1	MOSFET (Metal Oxide)	N-Channel	4.5 V 10 V	100 V	2500 pF	8-PowerTDFN	-55 °C	150 °C	Surface Mount	35 nC	2.1 V	20 V	PG-TSDSON-8	2.1 W 63 W	15 mOhm

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Cut Tape (CT)	1	$ 2.25
		10	$ 1.45
		100	$ 0.98
		500	$ 0.79
		1000	$ 0.72
		2000	$ 0.67
	Digi-Reel®	1	$ 2.25
		10	$ 1.45
		100	$ 0.98
		500	$ 0.79
		1000	$ 0.72
		2000	$ 0.67
	Tape & Reel (TR)	5000	$ 0.64
Newark	Each (Supplied on Cut Tape)	1	$ 1.64
		10	$ 1.25
		25	$ 1.13
		50	$ 1.02
		100	$ 0.90
		250	$ 0.81
		500	$ 0.72

Description

General part information

BSZ150 Series

Infineon's 100 V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Compared to the next best technology this family achieves a reduction of 30% in both RDS(on)and FOM (figure of merit).

Documents

Technical documentation and resources