Specification	IRL520STRL

Current - Continuous Drain (Id) (Tc)	9.2 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On)	4 V
Drive Voltage (Min Rds On)	5 V
FET Type	N-Channel
Gate Charge (Max)	12 nC
Input Capacitance (Ciss) (Max)	490 pF
Mounting Type	Surface Mount
Operating Temperature (Max)	175 °C
Operating Temperature (Min)	-55 °C
Package / Case	D2PAK (2 Leads + Tab), TO-263-3, TO-263AB
Package Name	TO-263 (D2PAK)
Power Dissipation (Max)	60 W, 3.7 W
Rds On (Max)	270 mOhm
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max)	2 V

IRL520 Series

Part	Gate Charge (Max)	Mounting Type	Input Capacitance (Ciss) (Max)	Package Name	Vgs (Max)	Drain to Source Voltage (Vdss)	Drive Voltage (Min Rds On)	Drive Voltage (Max Rds On)	Package / Case	FET Type	Technology	Power Dissipation (Max)	Vgs(th) (Max)	Rds On (Max)	Operating Temperature (Min)	Operating Temperature (Max)	Current - Continuous Drain (Id) (Tc)
Vishay Dale IRL520S	12 nC	Surface Mount	490 pF	TO-263 (D2PAK)	10 V	100 V	5 V	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	MOSFET (Metal Oxide)	3.7 W 60 W	2 V	270 mOhm	-55 °C	175 °C	9.2 A
Vishay Dale IRL520PBF-BE3	12 nC	Through Hole	490 pF	TO-220AB	10 V	100 V			TO-220-3	N-Channel	MOSFET (Metal Oxide)	60 W	2 V	270 mOhm	-55 °C	175 °C	9.2 A
Vishay Dale IRL520STRL	12 nC	Surface Mount	490 pF	TO-263 (D2PAK)	10 V	100 V	5 V	4 V	D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	N-Channel	MOSFET (Metal Oxide)	3.7 W 60 W	2 V	270 mOhm	-55 °C	175 °C	9.2 A
Vishay Dale IRL520PBF	12 nC	Through Hole	490 pF	TO-220AB	10 V	100 V	5 V	4 V	TO-220-3	N-Channel	MOSFET (Metal Oxide)	60 W	2 V	270 mOhm	-55 °C	175 °C	9.2 A

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