
BUK6Q12-40PJ
ActiveNexperia USA Inc.
40 V, P-CHANNEL TRENCH MOSFET

BUK6Q12-40PJ
ActiveNexperia USA Inc.
40 V, P-CHANNEL TRENCH MOSFET
Description
General part information
BUK6Q12-40P Series
P-channel enhancement mode Field-Effect Transistor (FET) in an MLPAK33 (SOT8002-3) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Technical Specifications
Parameters and characteristics for this part
| Specification | BUK6Q12-40PJ |
|---|---|
| Current - Continuous Drain (Id) (Tc) | 64 A |
| Drain to Source Voltage (Vdss) | 40 V |
| Drive Voltage (Max Rds On) | 4.5 V |
| Drive Voltage (Min Rds On) | 10 V |
| FET Type | P-Channel |
| Gate Charge (Max) | 108 nC |
| Grade | Automotive |
| Input Capacitance (Ciss) (Max) | 3800 pF |
| Mounting Type | Wettable Flank, Surface Mount |
| Operating Temperature (Max) | 175 °C |
| Operating Temperature (Min) | -55 °C |
| Package / Case | 8-PowerVDFN |
| Package Name | MLPAK33 |
| Power Dissipation (Max) | 94 W |
| Qualification | AEC-Q101 |
| Rds On (Max) | 12.4 mOhm |
| Technology | MOSFET (Metal Oxide) |
| Vgs (Max) | 20 V |
| Vgs(th) (Max) | 2.7 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
Sign in to see pricing
Create a free account to access distributor pricing data.
CAD
3D models and CAD resources for this part
Documents
Technical documentation and resources
Datasheet
Understanding power MOSFET data sheet parameters
MOSFET load switch PCB with thermal measurement
Leakage of small-signal MOSFETs
MOSFETs in Power Switch applications
Reverse battery protection in automotive applications
Using Power MOSFET Zth Curves
Thermal boundary condition study on MOSFET packages and PCB substrates
plastic thermal enhanced surface mounted package with side-wettable flanks (SWF); mini leads; 8 terminals;pitch 0.65 mm; 3.3 x 3.3 x 0.8 mm body